Si-based receivers for optical data links

Abstract

We present results for Ge/sub x/Si/sub 1-x/ waveguide pin detectors grown by rapid thermal chemical vapor deposition (RTCVD). Detectors with multiple Ge/sub 0.29/Si/sub 0.71/ absorption layers show an internal quantum efficiency of 33% at /spl lambda/=1.3 /spl mu/m with a dark current of 27 pAspl mu/m/sup 2/. The external quantum efficiency is limited to 7% by the fiber-to-waveguide coupling efficiency. The output eye diagram for a hybrid /spl lambda/=1.3 /spl mu/m silicon receiver at 500 Mb/s is demonstrated. Prospects of a silicon-based optoelectronic receiver array technology are discussed.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>