Deep zn-diffused (GaAl)As heterostructure stripe laser with twin transverse junctions for low threshold current and kink-free light characteristics

Abstract

Deep Zn diffusion at relatively low concentration through the active layer of a highly n-doped (GaAl)As double heterostructure is employed to produce a stripe laser with twin transverse p-n junctions (TTJ's) which provide lateral confinement of both carriers and light in the active layer. Such a structure combines a threshold current of around 40 mA for a 350 μm laser length (minimum measured = 23 mA for 67 μm length) with a near field typically 3 μm wide and an output beam divergence of 6° (both to half intensity).