Integration of High‐<i>k</i> Oxide on MoS₂ by Using Ozone Pretreatment for High‐Performance MoS₂ Top‐Gated Transistor with Thickness‐Dependent Carrier Scattering Investigation

Abstract

A top-gated MoS2 transistor with 6 nm thick HfO2 is fabricated using an ozone pretreatment. The influence to the top-gated mobility brought about by the deposition of HfO2 is studied statistically, for the first time. The top-gated mobility is suppressed by the deposition of HfO2 , and multilayered samples are less susceptible than monolayer ones.