Publication | Open Access
Quantum ratchet effects induced by terahertz radiation in GaN-based two-dimensional structures
79
Citations
21
References
2008
Year
Wide-bandgap SemiconductorAluminium NitrideEngineeringNanoelectronicsQuantum MaterialsQuantum Ratchet EffectsLinear Quantum RatchetsQuantum ScienceElectrical EngineeringPhysicsAluminum Gallium NitrideCategoryiii-v SemiconductorApplied PhysicsCondensed Matter PhysicsTerahertz TechniqueGan Power DeviceGan-based Two-dimensional StructuresPhotogalvanic EffectsTerahertz RadiationOptoelectronics
Photogalvanic effects are observed and investigated in wurtzite (0001)-oriented GaN/AlGaN low-dimensional structures excited by terahertz radiation. The structures are shown to represent linear quantum ratchets. Experimental and theoretical analysis exhibits that the observed photocurrents are related to the lack of an inversion center in the GaN-based heterojunctions.
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