SWIR/MWIR InP-Based p-i-n Photodiodes With InGaAs/GaAsSb Type-II Quantum Wells

Abstract

This paper presents the performance characteristics of InP-based p-i-n photodiodes with strain-compensated and lattice-matched InGaAs/GaAsSb type-II multiple quantum well (MQW) absorption regions. The results show that photodiodes with strain-compensated and lattice-matched absorption regions have optical response out to 3.4 and 2.8 <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">$\mu{\rm m}$</tex></formula> with dark current densities of 9.7 and 1.66 <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">${\rm mA}~{\rm cm}^{-2}$</tex></formula> , respectively, at 290 K under <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">${-}{\rm 0.5}~{\rm V}$</tex></formula> reverse bias. The carrier transport mechanism responsible for the difference in responsivity and detectivity between strain-compensated and lattice-matched InGaAs/GaAsSb MQWs is discussed.