Comparison Measurements of Silicon Carbide Temperature Monitors

Abstract

As part of a process initiated through the Advanced Test Reactor (ATR) National Scientific User Facility (NSUF) program to make Silicon Carbide (SiC) temperature monitors available for experiments, a capability was developed at the Idaho National Laboratory (INL) to complete post-irradiation evaluations of these monitors. INL selected the resistance measurement approach for detecting peak irradiation temperature from SiC temperature monitors. To demonstrate this new capability, comparison measurements were completed by INL and Oak Ridge National Laboratory (ORNL) on identical samples subjected to identical irradiation conditions. Results reported in this paper indicate that the resistance measurement approach yields similar peak irradiation temperatures if appropriate equipment is used and appropriate procedures are followed.