Demonstration of a new oscillator based on real-space transfer in heterojunctions

Abstract

A new real-space transfer oscillator is demonstrated in a layered GaAs/nAlGaAs heterojunction. A dc bias field, plus the ac oscillating field, is applied parallel to the layer interfaces to modulate the electron transfer from the GaAs layers to the nAlGaAs layers. This periodic electron transfer results in the ac current being 180° out of phase with the ac voltage and power being generated. A unique characteristic of this oscillator is that the electron transit times are associated with transverse dimensions and not dimensions between the ohmic contacts which should permit its extension to very high frequencies.