Publication | Closed Access
High Pressure Studies of the Raman-Active Phonons in Carbon Nanotubes
82
Citations
30
References
2001
Year
Materials SciencePressure DependenceNanosheetEngineeringCarbon-based MaterialNanomaterialsNanotechnologyCarbon NanotechnologyRaman-active PhononsApplied PhysicsPhononElectronic Band DispersionNanotubesCarbon NanotubesNanomechanicsNanophysics
We report high pressure Raman studies on as-prepared, purified, and solubilized single-walled and aligned multi-walled carbon nanotubes. The pressure dependence of radial (R) and tangential (T) vibrational bands in these samples is measured and compared with the results from other studies. In single-walled nanotubes, an abrupt drop in the intensity of these bands is seen near 2 GPa, indicative of a phase transition. Experiments on single (unbundled) tubes reveal a ≈10 cm—1 upshift of the R band relative to its frequency in bundled tubes. This is opposite to the predictions of calculations that include the intertube van der Waals interaction only and is explained by the changes in the electronic band dispersion driven by tube–tube interactions. Surprisingly, the pressure dependence of the R and T bands in unbundled tubes is very similar to that seen in bundled tubes, which indicates that the changes in the electronic band structure might significantly influence the pressure dependence.
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