A 20Gb/s Burst-Mode CDR Circuit Using Injection-Locking Technique

Jri Lee, Mingchung Liu

Digest of technical papers/Digest of technical papers - IEEE International Solid-State Circuits Conference · 2007 · 42 citations · 3 references

Concepts

Abstract

The design and experimental verification of a 20Gb/s CDR circuit based on injection-locking technique is presented. Fabricated in 90nm CMOS technology, this circuit achieves a BER of <10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-9</sup> for both continuous and burst modes. It has tunability of over 800Mb/s while consuming 175mW. The re-acquisition time of this CDR is 1b interval.

References

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