Temperature effects on IGCT performance

Abstract

The integrated gate-commutated thyristor (IGCT) is an advanced semiconductor device for high frequency, high power applications. This work presents a detailed discussion of experimental dynamic characteristics of IGCTs at ambient temperatures ranging from -40/spl deg/C to 50/spl deg/C. A lumped-charge physics-based IGCT model with full temperature response is also developed in this work. A chopper circuit with an inductive load is employed to test the IGCT switching behavior both experimentally and by simulation. Comparison between the experimental and simulation results is made and discrepancies are discussed.