Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications - Concepedia

Concepedia

Publication | Open Access

Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications

DOI Full Paper Access

129

Citations

40

References

2015

Year

Lai-Guo Wang, Qian Xu, Yanqiang Cao, Zhengyi Cao, Guoyong Fang, Aidong Li, Di Wu

Nanoscale Research Letters

References

	Year	Citations

Page 1