Spin injection probed by combined optical and electrical techniques in spin‐LED

Abstract

Spin-LEDs with a tunnel barrier made of a ferromagnetic metal (Co)/semiconductor (AlGaAs) Schottky junction were grown by combined molecular beam epitaxy and sputtering, and characterized. Under a longitudinal magnetic field of B = 0.8 T, we measured a circular polarization degree of the electro-luminescence (EL) of ∼4%. Using the electron spin relaxation and recombination times measured by time-resolved photoluminescence (TRPL), the yield of spin injection through Schottky contact of the spin-LED has been determined. We find η ∼ 30%. (© 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)