XFCB: a high speed complementary bipolar process on bonded SOI

Abstract

A fabrication process was developed to obtain full, dielectrically isolated complementary bipolar transistors. Direct-wafer-bonding silicon-on-insulator and deep-trench-isolation technologies were used. Polysilicon was used as the emitter for both NPN and PNP transistors. A single layer of polysilicon was used to fabricate both transistor types. The process is characterized by a 12 V breakdown and yields transistors with a cutoff frequency of 4.5 GHz and 2.5 GHz for the NPN and PNP devices, respectively.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>