Si and SiGe millimeter-wave integrated circuits

TLDR

Monolithic integrated millimeter‑wave circuits based on silicon and SiGe are emerging as an attractive option for millimeter‑wave communications and sensors, enabling single‑chip front‑ends that combine active devices, passive planar structures, and antenna elements. This paper reviews the state‑of‑the‑art silicon‑ and SiGe‑based monolithic integrated millimeter‑wave circuits. The technological background, active and nonlinear devices, and passive circuit structures suitable for silicon‑ and SiGe‑based monolithic integrated millimeter‑wave circuits are discussed. Examples of such integrated circuits and first systems applications are also presented.

Abstract

Monolithic integrated millimeter-wave circuits based on silicon and SiGe are emerging as an attractive option in the field of millimeter-wave communications and millimeter-wave sensors. The combination of active devices with passive planar structures, including also antenna elements, allows single-chip realizations of complete millimeter-wave front-ends. This paper reviews the state-of-the-art silicon- and SiGe-based monolithic integrated millimeter-wave circuits. The technological background as well as active and nonlinear devices and passive circuit structures suitable for silicon- and SiGe-based monolithic integrated millimeter-wave circuits are discussed. Examples of such integrated circuits and first systems applications are also presented.