High-efficiency thin-film light-emitting diodesat 650 nm

Abstract

The first surface-textured thin-film GalnP/AlGalnP light-emitting diodes operating at a wavelength of 650 nm are presented. Unencapsulated devices reach an external quantum efficiency of 24%, which is further increased to 31% by encapsulation. The optical output power is 4 mW at a current of 7 mA.