GaInAs monolithic photoreceiver integrating p-i-n/JFET with diffused junctions and a resistor

Abstract

An integrated p-i-n/JFET/resistor has been developed using a GaInAs epitaxial structure grown on a planar substrate A four-layered structure allows separate optimization of both active devices. Owing to the good performances and high reliability of individual components, the sensitivity of these monolithic photoreceivers is evaluated as -29 dBm at 560 Mb/s (10/sup -9/ bit error rate). Remarkable stability over time is exhibited.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>