Electrical performance and radiation sensitivity of stacked PMOS dosimeters under bulkbias control

Abstract

A new method for biasing stacked PMOS dosimeters has shown the potential for increased radiation dose range. This method involves control of the output voltage of stacked depletion mode RADFETs by an appropriate bulkbias. Radiation sensitivity measurement has shown impressive results where 84 mV/rad sensitivity has been demonstrated. The possibility of a zero temperature coefficient (ZTC) bulkbias may also prove attractive. Simulation and measurement are in close agreement indicating that proposed device geometry changes should further reduce the output voltage while maintaining milli-rad radiation sensitivity capability. Simulation shows that radiation sensitivity of up to 120 mV/rad can be achieved with proposed width/length (W/L) device geometry changes.