Influence of the cabling geometry on paralleled diodes in a high power rectifier

Abstract

In this paper, the relationship between wiring geometry and current unbalances of paralleled diodes in a high-current rectifier is studied. An electrical modelling of one arm of the rectifier is carried out, using lumped inductances computed from geometrical data. After electrical simulation, current unbalances in paralleled semiconductors are observed. An action on the incriminated bar geometry allows a reduction of these unbalances.