The Dual GCT—A New High-Power Device Using Optimized GCT Technology

Abstract

<para xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> The performance of high-power inverters is determined strongly by the characteristics of the semiconductor devices. The design of suitable devices is always a compromise between on-state losses and switching losses. In this paper, a new device—the Dual Gate Commutated Thyristor (GCT)—is proposed that combines the advantages of differently optimized GCTs and realizes low conduction and low switching losses in a single semiconductor device. The concept is introduced first, before the analytical design is presented. Next, finite-element-method simulations are employed to extend the investigation to devices that are not yet available. Measurements of a hybrid Dual GCT are added to verify the advantages of the concept. Finally, the results are discussed. </para>