3D Sensor application with open through silicon via technology

Abstract

Today 3D interconnection approaches are considered to provide one of the most promising enabling technologies for “More than Moore” solutions. In particular, 3D integration can provide significant progress in semiconductor device development regarding increased system functionality and integration density. In this paper, we describe an innovative concept for sensor integration based on a quality-proven “open” TSV technology on the basis of a 0.35μm CMOS process.