2011 · 40 citations · 6 references
EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesSensorsCmos Circuit DesignComplementary Metal-oxide-semiconductor TechnologyIntegrated Circuit DesignIntegrated Circuit DevicesIntegrated Circuit FabricationSensor Integration3D Integrated CircuitsCircuit IntegrationCmos ScalingThree-dimensional Integrated Circuit InterconnectsThree-dimensional Integrated Circuit LayoutThree-dimensional IntegrationThrough-silicon Via DesignThrough-silicon Vias
Today 3D interconnection approaches are considered to provide one of the most promising enabling technologies for “More than Moore” solutions. In particular, 3D integration can provide significant progress in semiconductor device development regarding increased system functionality and integration density. In this paper, we describe an innovative concept for sensor integration based on a quality-proven “open” TSV technology on the basis of a 0.35μm CMOS process.
6
High density 3D integration using CMOS foundry technologies for 28 nm node and beyond
Jason Lin, W.C. Chiou, K.F. Yang et al. · 2010 · 70 citations