GaAlAs/GaAs metamorphic Bragg mirror for long wavelengthVCSELs

Abstract

A high reflectivity GaAs/AlGaAs Bragg mirror (> 99.7%) has been grown for the first time on InP. Dislocations present in the metamorphic material do not propagate to the active layer. The metamorphic mirror offers a promising alternative to wafer fusion for long wavelength surface-emitting lasers.