A novel on-wafer resistive noise source

Abstract

We describe a novel on-wafer resistive noise source (ORNS) suitable for noise parameter characterization of microwave devices using the cold noise power measurement technique. The noise source can enhance measurement accuracy by providing a calibrated noise temperature directly at the device reference plane. A procedure to determine the excess noise ratio of the noise source is presented. Noise figure measurements performed up to 40 GHz with the on-wafer noise source and with a commercial coaxial noise source are in good agreement, thereby validating the technique. The novel source is effective as a noise standard up to millimeter-wave frequencies.