Heterogeneous Integration of InGaAs Nanowires on the Rear Surface of Si Solar Cells for Efficiency Enhancement

Jae Cheol Shin, Parsian K. Mohseni, Ki Jun Yu, Stephanie Tomasulo, Kyle H. Montgomery, Minjoo Larry Lee, John A. Rogers, Xiuling Li

ACS Nano · 2012 · 42 citations · 19 references

Concepts

Abstract

We demonstrate energy-conversion-efficiency (η) enhancement of silicon (Si) solar cells by the heterogeneous integration of an In(x)Ga(1-x)As nanowire (NW) array on the rear surface. The NWs are grown via a catalyst-free, self-assembled method on Si(111) substrates using metalorganic chemical vapor deposition (MOCVD). Heavily p-doped In(x)Ga(1-x)As (x ≈ 0.7) NW arrays are utilized as not only back-reflectors but also low bandgap rear-point-contacts of the Si solar cells. External quantum efficiency of the hybrid In(x)Ga(1-x)As NW-Si solar cell is increased over the entire solar response wavelength range; and η is enhanced by 36% in comparison to Si solar cells processed under the same condition without the NWs.

References

19