A Theory of Migration Energies of an Interstitial in Germanium and Silicon

Abstract

The migration energies of an interstitial in germanium and silicon were calculated using attractive polarization energies and Born-Mayer type repulsive energies. The results are 0.25 eV and 0.22 eV for germanium and silicon, respectively. These values should be considered to be the upper limit values of migration energies.