Air‐Stable n‐Channel Organic Semiconductors Based on Perylene Diimide Derivatives without Strong Electron Withdrawing Groups

Abstract

Air-stable transistors based on perylene diimides without strong electron withdrawing groups (see figure) are reported. Through varying the device fabrication process, electron mobilities on the order of 0.1 cm2 V–1 s–1 are achieved by using silica surfaces treated with a surfactant at elevated substrate temperatures. The devices show good air-stability, even after prolonged storage in air (> 80 days). These compounds are potentially useful air-stable n-type semiconductors for thin film transistors.