IEEE Photonics Technology Letters · 2010 · 231 citations · 7 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsOptoelectronicsPhotonicsHigh-frequency Semiconductor DevicesLight SourcesLight-emitting DiodesOptical Communication SystemsOptical ModulationOptical SourcesBit Error RateFrequency ModulationGallium Nitride Light-emitting DiodesHigh-speed ModulationHigh-speed Optical ModulationHigh-speed TransmissionModulation BandwidthNonreturn-to-zero Signaling
The high-frequency modulation of individual pixels in III-nitride-based micro-pixel light-emitting diode arrays, where each array consists of 16 × 16 individually addressable 72-μm-diameter pixels, are reported. The devices investigated have peak emission wavelengths at 370, 405, and 450 nm, respectively. The optical -3-dB modulation bandwidth of a typical pixel from the 450-nm-emitting device was found to be approximately 245 MHz. Data transmission at rates of up to 1 Gb/s is demonstrated from a single pixel emitting at 450 nm, using on-off keying nonreturn-to-zero modulation, with a bit-error ratio of less than 1 × 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-10</sup> . Such devices have potential for free-space or fiber-coupled visible light communications.
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H. X. Zhang, D. Massoubre, Jonathan J. D. McKendry et al. · Optics Express · 2008 · 56 citations · Full text
New light from hybrid inorganic–organic emitters
C. Belton, Grigorios Itskos, G. Heliotis et al. · Journal of Physics D Applied Physics · 2008 · 49 citations · Full text
Natural Sciences, Materials Engineering, Materials Science +17