Binding Energies of Excitons in <font>GaAs/AlAs</font> Quantum Wells Under Pressure

Abstract

The binding energy of an exciton in the GaAs/AlAs quantum well is discussed including the influence of interface optical phonons and bulk longitudinal optical phonons confined in the well under hydrostatic pressure. The dependence of the phonon energies on pressure is considered using a linear interpolation method to obtain the pressure effect on the exciton binding energy by a variational calculation. The result shows that the polaronic effect on the exciton binding energies cannot be neglected and the pressure effect on the exciton-phonon interaction is obvious.