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Spice macro models for annular mosfets

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0

References

2004

Year

Abstract

MOSFETs with annular, or enclosed, geometries are now finding frequent use in rad-hard by design (RHBD) approaches to designing custom CMOS ASICs for aerospace applications. Unfortunately, these devices are not accurately modeled by the BSIM3 models normally provided for devices with ordinary rectangular gates. We present a SPICE macro model for an annular n-channel MOSFET to account for the annular geometry effects on gate overlap capacitance and output conductance.