Publication | Closed Access
Contribution of Field-Assisted Tunneling Emission to Dark Current in InAs–GaAs Quantum Dot Infrared Photodetectors
78
Citations
12
References
2004
Year
EngineeringOptoelectronic DevicesSemiconductorsPhotodetectorsField-assisted Tunneling EmissionCompound SemiconductorQuantum SciencePhotonicsElectrical EngineeringPhotoluminescencePhysicsQuantum DeviceField-assisted TunnelingPhotoelectric MeasurementDark CurrentApplied PhysicsQuantum DevicesCalculated Dark CurrentsQuantum Photonic DeviceOptoelectronics
A model for the dark current in quantum dot infrared photodetectors, including thermionic emission and field-assisted tunneling, is developed. The calculated dark currents are in excellent agreement with measured values for a wide range of temperatures (78 K-295 K) and applied bias (0-3 V).
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