Transmission‐line equivalent curcuit model of minority carrier transient current in quasi‐neutral silicon layers including effects

Abstract

Abstract A novel transmission‐line model for the minority carrier transport through quasi‐neutral arbitrarily doped layers is proposed. Based on detailed drift‐diffusion equations, the novel TLEC includes the inductance that represents the influence of the relaxation‐time term. Coupled with a object‐orientated hybrid circuit simulator, the novel transmission‐line model is implemented for the transient analysis of minority carrier transport. A substantial longer storage time of the minority carrier transient current at the collector end of ultra‐narrow base is predicted owing to inclusion of the relaxation‐time term.