65-GHz receiver in SiGe BiCMOS using monolithic inductors and transformers

Abstract

This paper describes a single-chip 65-GHz SiGe BiCMOS radio receiver IC which includes an LNA, a transformer balun, a downconversion mixer, an IF amplifier, and a 65-GHz VCO. The single-ended downconversion gain is 21 dB with an input compression point of -22 dBm. The DSB receiver noise figure is a record 12 dB for IF frequencies in the 0 to 2 GHz range. By employing only transformers and inductors as matching elements, the die area, which includes all pads, is 790 /spl mu/m /spl times/ 740 /spl mu/m.