Restoration of graphene from graphene oxide by defect repair

Abstract

A simple and efficient method to repair defects in graphene oxide (GO) is reported, accompanied by a simultaneous reduction process by a methane plasma. The graphene after repair is of high quality. For a typical monolayer after repair and reduction, the minimum sheet resistance at the Dirac point and the Raman D/G peak intensity ratio are about 9.0 kΩ/□ and ∼0.53, respectively.