Publication | Closed Access
Effect of orientation on the Schottky barrier height of thermodynamically stable epitaxial metal/GaAs structures
42
Citations
0
References
1992
Year
Materials ScienceSemiconductorsElectrical EngineeringElectronic DevicesSchottky Barrier HeightEngineeringBarrier HeightApplied PhysicsCondensed Matter PhysicsSemiconductor MaterialOptoelectronic DevicesSchottky Barrier FormationThin FilmsMolecular Beam EpitaxyEpitaxial Growth∼1.03 EvSemiconductor Nanostructures
The use of thermodynamically stable epitaxial metal/GaAs contacts fabricated by molecular-beam epitaxy has enabled detailed studies of Schottky barrier formation on well characterized and controlled structures. The effects of lattice mismatch, annealing and substrate orientation on the barrier height of Sc1−xErxAs semimetal contacts on n-GaAs are studied. The barrier height could be varied from ∼1.03 eV for Sc1−xErxAs films grown at 350–400 °C and annealed at ∼600 °C on (100) GaAs to ∼0.63 eV for films grown at ∼600 °C on (1̄1̄1̄) GaAs.