Low‐Temperature Sintering and Microwave Dielectric Properties of V ₂ O ₅ ‐Added Zn ₂ SiO ₄ Ceramics

Abstract

V 2 O 5 was added to ceramics of nominal composition Zn 1.8 SiO 3.8 (ZS) in order to decrease their sintering temperature for application to low‐temperature cofired ceramic devices. For the specimens sintered at 875°C, a dense microstructure was developed when the V 2 O 5 content exceeded 9.0 mol% due to the presence of the liquid phase containing SiO 2 and V 2 O 5 . The microwave dielectric properties of the ZS ceramics were influenced by the V 2 O 5 content. Good microwave dielectric properties of Q × f =17 500 GHz, ɛ r =7.3, and τ f =−28 ppm/°C were obtained from the specimen containing 12.0 mol% V 2 O 5 sintered at 875°C for 2 h.