Emission Gain-Narrowing from Melt-Recrystallized Organic Semiconductors

Abstract

Recrystallization from the melt, performed directly on-substrate, allows the exploitation of the amplified spontaneous emission (ASE) properties of oligo-phenylene/-thienylene organic semiconductors in a superior manner (see Figure for a micrograph of the thiophene BP1T on quartz). Upon laser irradiation, a gain-narrowing of one or more emission lines is observed, partially due to molecular alignment in the recrystallized phase.