Electron microscope investigation of the microplastic deformation mechanisms of silicon by indentation

Abstract

The specific features of the dislocation structure, occuring in the vicinity of indentations have been studied using Si single crystals under different conditions of deformation (at temperatures of 20 to 700 °C and loadings of 0.5 to 10 p). It is shown, that the deformation of crystals at temperatures of 350 to 650 °C results in twin formation with {111} twinning plane. Flat defects with {115} habit plane are revealed. They are shown to be platelets of a new phase, which is of the hexagonal structure with c = 6.31 Å and a = 3.86 Å. The possible mechanism of the phase transformation is discussed.