An SOI-based High-Voltage, High-Temperature Gate-Driver for SiC FET

Abstract

A high-voltage and high-temperature gate-driver chip for SiC FET switches is designed and fabricated using 0.8- micron, 2-poly and 3-metal BCD on SOI process. It can generate output voltage swing from -5 V to 30 V and can operate up to 175degC ambient temperature. This gate-driver chip is intended to drive SiC power FETs in DC-DC converters in a hybrid electric vehicle. The converter modules along with the gate-driver chip will be placed very close to the engine where the temperature can reach up to 175degC. Successful operation of the chip at this temperature without heat sink and liquid cooling will help to achieve greater power-to-volume as well as power-to-weight ratios for the power electronics module. Initial test results presented in this paper also validate the simulation.