Radiation effects in a CMOS active pixel sensor

Abstract

A CMOS active pixel sensor has been evaluated with Co60, 10 MeV proton and heavy-ion irradiation. Permanent displacement damage effects were seen but total ionizing dose-induced dark current and increase in power supply current annealed at 100/spl deg/C. Large changes in responsivity were seen after proton irradiation, which subsequently annealed. Mechanisms for these responsivity changes are discussed, but a definitive cause has not yet been established.