IEEE Transactions on Microwave Theory and Techniques · 2007 · 36 citations · 11 references
EngineeringElectrical EngineeringMicroelectronicsMicrowave EngineeringSemiconductor DevicesHigh-frequency Semiconductor DevicesMicrowave Integrated CircuitsMicrowave OscillatorsMicrowave Passive ComponentsMicrowave Semiconductor DevicesRadio-frequency Integrated CircuitsCommon Base ConfigurationInjection LockingIntegrated Passive ComponentsMicrowave Oscillator DesignMillimeter-wave Integrated CircuitsMonolithic Microwave Integrated Circuit DesignMonolithic Microwave Integrated Circuits
<para xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> In this paper, a sub-millimeter-wave HBT oscillator is reported. The oscillator uses a single-emitter 0.3 $\mu$m$\,\times\,$ 15 $\mu$m InP HBT device with maximum frequency of oscillation $({ f}_{\max})$ greater than 500 GHz. The passive components of the oscillator are realized in a two metal process with benzocyclobutene used as the primary transmission line dielectric. The oscillator is implemented in a common base topology due to its inherent instability. The design includes an on-chip resonator, output matching circuitry, and injection locking port. A free-running frequency of 311.6 GHz has been measured by down-converting the signal. Additionally, injection locking has been successfully demonstrated with up to 17.8 dB of injection-locking gain. This is the first fundamental HBT oscillator operating above 300 GHz. </para>
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192 GHz push–push VCO in 0.13 µm CMOS
Chen Cao, Eunyoung Seok, O K.K. · Electronics Letters · 2006 · 69 citations