Compounds and Properties of the System Si‐Al‐O‐N

Abstract

A product or quasi‐equilibrium diagram for compounds formed in the system Si‐Al‐O‐N at 1800°C in 1 atm N 2 is presented, X‐ray diffraction data for phases are given, and the reaction and sintering processes are discussed. Data for the lattice expansion of the β‐Si 3 N 4 structure accompanying the incorporation of Al‐O is presented and used to calculate theoretical densities.