2002 · 25 citations · 1 references
EngineeringElectrical EngineeringMicroelectronicsMicrowave EngineeringSemiconductor DevicesHigh-frequency Semiconductor DevicesIntegrated Circuit DesignMicrowave Integrated CircuitsMicrowave MixersMicrowave Semiconductor DevicesRadio-frequency Integrated CircuitsBandwidthBroadband Mixer DesignConversion LossGaas Microwave Integrated CircuitsGaas Monolithic Microwave Integrated CircuitsMicrostrip LinesMixersMonolithic Microwave Integrated Circuits
This paper describes a planar MMIC HBT Schottky diode mixer utilizing novel baluns fabricated on a 4 mil thick GaAs substrate. The balun is based on the Marchand balun structure and is implemented in a microstrip environment. The balun structure consists of 7 closely coupled microstrip lines and backside vias. Four 10/spl times/10 /spl mu/m/sup 2/ HBT Schottky diodes in a star configuration provide the mixing function. The HBT diodes have cut-off frequencies in excess of 750 GHz. The mixer achieves 8-10 dB conversion loss and very low spurious responses over a 26-40 GHz RF and LO bandwidth and DC-11 GHz IF. This IF bandwidth is broader than a previously demonstrated CPW star mixer using InGaAs HEMT technology, and easier to integrate into an assembly due to its microstrip implementation.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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