Publication | Closed Access
A GSM/EDGE dual-mode, 900/1800/1900-MHz triple-band HBT MMIC power amplifier module
19
Citations
8
References
2003
Year
Unknown Venue
Low-power ElectronicsElectrical EngineeringDiode SwitchesEngineeringRf SemiconductorGsm/edge Dual-modeHigh-frequency DeviceMixed-signal Integrated CircuitBand Select SwitchPower ElectronicsMicroelectronicsRf Subsystem
This paper describes a 3.5-V operation HBT MMIC power amplifier module for use in GSM/EDGE dual-mode, 900/1800/1900-MHz triple band handset applications. With diode switches and a band select switch built on the MMIC, the module delivers a P/sub out/ of 35.5 dBm and a PAE of about 50% for GSM900, a 33.4-dBm P/sub out/ and a 45% PAE for GSM1800/1900. While satisfying an error vector magnitude (EVM) of less than 4% and a receive-band noise power of less than -83 dBm/100 kHz, the module also delivers a 29.5 dBm P/sub out/ and a PAE of over 25% for EDGE900, a 28.5 dBm P/sub out/ and a PAE of over 25% for EDGE1800/1900.
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