InAs-based heterojunction bipolar transistors

Abstract

The first InAlAs/InAs heterojunction bipolar transistors are reported. A current gain of 100 at room temperature is measured. The base-collector junction is an InAs pn homojunction, which is optimised to have low reverse leakage at room temperature. The emitter is pseudomorphic AlInAs, linearly graded to increase the barrier which inhibits hole injection into the emitter.