Low-Voltage, High-Mobility Pentacene Transistors with Solution-Processed High Dielectric Constant Insulators

Abstract

High-performance pentacene insulated-gate field-effect transistors (IGFETs, see Figure) are described. It is demonstrated that, if barium strontium titanate is used as the gate insulator, pentacene IGFETs with a mobility similar to that of a-Si:H thin film transistors, good current modulation, and excellent subthreshold slopes at an operating voltage of about 5 V can be fabricated.