XPS investigations of electrochemically modified porous silicon layers

Abstract

Abstract The effect of electrochemical modifications like anodic oxidation, polymer deposition and electrodeposition of Cu and Ni on porous silicon are investigated with XPS and sputter depth profiling. It is shown that after the anodic oxidation small amounts of Si 0 remain in the porous layer. The deposition of polymers as well as of metals takes place not only at the surface, but also in the porous layer.