Sensors · 2008 · 92 citations · 16 references
EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesSensorsCmos Circuit DesignComplementary Metal-oxide-semiconductor TechnologyDetector TechnologyIntegrated Circuit DesignMetal-oxide-semiconductor Field-effect TransistorsSemiconductor DetectorsCharge CollectionCharge Injection DevicesCmos Fabrication ProcessesComplementary Metal-oxide-semiconductor DetectorsDetector FabricationPixel ArchitecturePixel DetectorsReadout Integrated Circuits
In this paper we present a novel, quadruple well process developed in a modern 0.18 mm CMOS technology called INMAPS. On top of the standard process, we have added a deep P implant that can be used to form a deep P-well and provide screening of N-wells from the P-doped epitaxial layer. This prevents the collection of radiation-induced charge by unrelated N-wells, typically ones where PMOS transistors are integrated. The design of a sensor specifically tailored to a particle physics experiment is presented, where each 50 mm pixel has over 150 PMOS and NMOS transistors. The sensor has been fabricated in the INMAPS process and first experimental evidence of the effectiveness of this process on charge collection is presented, showing a significant improvement in efficiency.
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Straggling in thin silicon detectors
H. Bichsel · Reviews of Modern Physics · 1988 · 387 citations
A 0.6 μm CMOS pinned photodiode color imager technology
R.M. Guidash, T.-H. Lee, P.P.K. Lee et al. · 2002 · 99 citations
Simulation and measurements of charge collection in monolithic active pixel sensors
G. Deptuch, M. Winter, W. Dulinski et al. · Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment · 2001 · 58 citations
Engineering, Computer Engineering, Electrical Engineering +14