High performance single supply power amplifiers for GSM and DCS applications using true enhancement mode FET technology

Abstract

Two high performance single supply power amplifier IC products have been developed for GSM and DCS applications using true enhancement mode FET technology. At VD=3.2V, under CW conditions, the GSM IC supplies +35.5 dBm output power at 58% PAE and the DCS IC supplies +33.5 dBm at 46% PAE. These ICs have low leakage currents similar to HBT and LDMOS and do not require the use of a drain switch. In addition, due to a high threshold voltage (Vth=+0.6V), they exhibit excellent RF isolation at Vref=0.1V and Pin=+5 dBm and do not require on-chip attenuators.