2002 · 35 citations · 8 references
EngineeringElectrical EngineeringMicroelectronicsPower ElectronicsSemiconductor DevicesComplementary Metal-oxide-semiconductor TechnologyDevice CharacterizationIntegrated Circuit DesignMetal-oxide-semiconductor Field-effect TransistorsTransistor BiasingWide Band Gap SemiconductorsBreakdown VoltageHigh-voltage BreakdownPower Electronics DevicesSilicon
In this paper, a new vertical DMOS Transistor is proposed, in which floating islands are placed in the drift region. This new structure, called "FLIMOST", exhibits improved on-state performance when compared to the conventional VDMOST. For instance, for a breakdown voltage of 900 Volts, the performance is strongly improved in term of specific on-resistance (reduction of about 70% relative to the conventional structure and 40% relative to the silicon limit). Moreover the specific on-resistance theoretical limits of FLIMOST family are determined and compared to those of the "Superjunction" MOS Transistor family: this comparison shows the strong interest of the FLIMOSFET in the 200 V-1000 V breakdown voltage range.
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A new generation of high voltage MOSFETs breaks the limit line of silicon
Gerald Deboy, N. Marz, Josef Štengl et al. · 2002 · 402 citations
Engineering, Electrical Engineering, Electronic Materials +13