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Activation of Oxygen on MgO: O<sub>2</sub><sup>.−</sup> Radical Ion Formation on Thin, Metal‐Supported MgO(001) Films
112
Citations
24
References
2011
Year
Materials EngineeringMaterials ScienceOxide HeterostructuresMgo LatticeEngineeringMaterial AnalysisOxidation ResistanceOxide ElectronicsSurface ScienceCondensed Matter PhysicsApplied PhysicsSitu Epr SpectroscopySolid-state ChemistryMetal‐supported MgoChemistryThin FilmsElectrochemistry
Distortion is the key: In situ EPR spectroscopy provides the first experimental confirmation that the adsorption of O2 molecules on a stoichiometric ultrathin MgO(001) film on Mo(001) leads to the spontaneous formation of O2.− radicals. The results show that polaronic distortion of the MgO lattice (see picture; Mg yellow, O blue) stabilizes the radical, and this distortion is only possible in very thin films.
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