Advanced Functional Materials · 2009 · 259 citations · 38 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsOptoelectronicsPhotonicsLuminescent MaterialsOptoelectronic DevicesOptoelectronic MaterialsOrganic Electronic MaterialsOrganic SemiconductorsSemiconductor LasersLasersOrganic ElectronicsOrganic Field-effect TransistorsOrganic LasersWave Spectral Evolution
Abstract A high‐performance ambipolar light‐emitting transistor (LET) that has high hole and electron mobilities and excellent luminescence characteristics is described. By using this device, a conspicuous light‐confined edge emission and current‐density‐dependent spectral evolution are observed. These findings will result in broader utilization of device potential and they provide a promising route for realizing electrically driven organic lasers.
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General observation of n-type field-effect behaviour in organic semiconductors
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